Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Eleonora M. Danilina and
• Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

• . It is shown that isovalent doping of GaAs potential barriers by bismuth was accompanied by a red-shift of the photoluminescence peak of InAs quantum dots of 121 meV. Keywords: infrared photodetectors; ion-beam deposition; nanoheterostructures; photoluminescence; quantum dot; semiconductors

• ; Introduction The formation of III–V nanoheterostructures with quantum dots (QDs) raises the possibility of developing a new generation of photodetectors in the infrared range [1][2][3]. The significant problems of existing HgCdTe detectors are low yield and high cost in comparison with quantum-well infrared

• photodetectors (QWIPs) [4]. The QWIPs, in turn, have a simpler technology but a low quantum efficiency and require cooling. One way to solve these problems is to grow semiconductor heterostructures in which QDs are embedded. The localization of photogenerated charge carriers in a quantum dot along three

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot

• Tarek A. Ameen,
• Hesameddin Ilatikhameneh,
• Archana Tankasala,
• Yuling Hsueh,
• James Charles,
• Jim Fonseca,
• Michael Povolotskyi,
• Jun Oh Kim,
• Sanjay Krishna,
• Monica S. Allen,
• Jeffery W. Allen,
• Rajib Rahman and
• Gerhard Klimeck

Beilstein J. Nanotechnol. 2018, 9, 1075–1084, doi:10.3762/bjnano.9.99

• absorption; quantum qot filling; self-assembled quantum dots; semi-empirical tight-binding; sp3d5s* with spin–orbit coupling (sp3d5s*_SO); Introduction Self-assembled quantum dots are employed as light absorbers in many optoelectronic devices, such as quantum-dot infrared photodetectors (QDIPs) [1][2], and

Optical contrast and refractive index of natural van der Waals heterostructure nanosheets of franckeite

• Patricia Gant,
• Foad Ghasemi,
• David Maeso,
• Carmen Munuera,
• Elena López-Elvira,
• Riccardo Frisenda,
• David Pérez De Lara,
• Gabino Rubio-Bollinger,
• Mar Garcia-Hernandez and
• Andres Castellanos-Gomez

Beilstein J. Nanotechnol. 2017, 8, 2357–2362, doi:10.3762/bjnano.8.235

• adsorbates between the layers. Very recently Molina-Mendoza et al. demonstrated mechanical and liquid-phase exfoliation of franckeite down to 3–4 unit cells and they fabricated field-effect devices, near infrared photodetectors and PN junctions [15]. Also, Velický et al. isolated single unit cell nanosheets

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

• Ionel Stavarache,
• Valentin Adrian Maraloiu,
• Petronela Prepelita and
• Gheorghe Iordache

Beilstein J. Nanotechnol. 2016, 7, 1492–1500, doi:10.3762/bjnano.7.142

• ≈ 42 µs) [49] or Ge–graphene–ZnO heterostructure infrared photodetectors (tr ≈ 40 µs and tf ≈ 90 µs) [50]. More importantly, these are the best results reported so far for photodetectors based on Ge-nps. We attribute this relatively fast response to the extremely high carrier mobility resulting from